PART |
Description |
Maker |
NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
2N942 2N2330 2N2007 2N3317 2N2165 2N2162 2N2167 2N |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-5 Open-Drain SOT µP Reset Circuit TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | TO-46 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-46 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-46 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
|
Sumida, Corp.
|
AD539SD883B AD539SE883B AD537SD883B |
5V wideband dual-channel linear multiplier/divider. For precise high bandwidth AGC and VGA systems, voltage-controlled filters, video-signal processing InputV:0-4V; 500mW; integrated circuit voltage-to-frequency converter
|
Analog Devices
|
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 15A条(c)的|园区 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五(巴西)总裁| 300mA的一(c)|
|
NXP Semiconductors N.V.
|
2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
|
Central Semiconductor, Corp. Microsemi, Corp.
|
DG417LAK/883 DG419LAK/883 DG418LAK/883 DG419LDY |
High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-DFN; Temperature Range: -40 to 125C 精密单片低电压CMOS模拟开 High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-MSOP; Temperature Range: -40 to 125C 精密单片低电压CMOS模拟开
|
Vishay Intertechnology,Inc. Vishay Intertechnology, Inc.
|
BY329X1500 BY329X-1500S BY329X-1500 BY329X-1500S12 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Damper diode fast, high-voltage Damper diode fast/ high-voltage Damper diodes fast, high-voltage - I<sub>FRM</sub>: 16 A; I<sub>O (AV)</sub>: 10 A; V<sub>RRM</sub>: 1500 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
|
http:// NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
FE5A-1D-0 FE5A-1J-0 FE5A-1G-0 FE5A-1F-0 FE5A-1E-0 |
High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-MSOP; Temperature Range: -40 to 125C; Container: Tape and Reel High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-DFN; Temperature Range: -40 to 125C; Container: Tape and Reel
|
Power-One
|
BY329-1700S |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Damper diode fast, high-voltage
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
2SC4726TLP |
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
|
Rohm
|
BTC3838N3 |
High Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
|
Cystech Electonics Corp.
|